| PART |
Description |
Maker |
| 3SK148 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|
| SGM2016M/P |
GaAs N-channel Dual-Gate MES FET
|
SONY
|
| SGM2016AP SGM2016AM SGM2016AM_AP |
GaAs N-channel Dual-Gate MES FET
From old datasheet system
|
Sony
|
| CF739 Q62702-F1215 |
From old datasheet system
GaAs FET (N-channel dual-gate GaAs MES FET)
|
Siemens Semiconductor G...
Siemens Semiconductor Group
Infineon
SIEMENS AG
|
| 3SK240 E001707 |
N CHANNEL DUAL GATE MES TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| GN2011 |
GaAs N-Channel MES IC
|
Panasonic
|
| GN1021 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
|
| 3SK241 |
GaAs N-Channel MES FET
|
Panasonic Semiconductor
|
| NE6500496 |
4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管
0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC[NEC]
|
